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| symbol parameters & conditions unit min. typ. max. v ce =15v, i c = 1200 ma, class c c ob output capacitance: f = 1 mhz, i e = 0 pf 8 .0 bipolarics, inc part number b 3 0v1 32 0b silicon microwave power transistor product data sheet features: common base package configuration high output power 8 w @ 1.0 ghz high gain bandwidth product f t = 6.0 ghz @ i c = 8 00 ma high gain g pe = 7.5 db @ 1.0ghz performance d ata: electrical characteristics (t a = 25 o c) high reliability gold metallization nitride passivation diffused ballast resistors ceramic & pill packages available v cbo collector-base voltage 6 0 v v ceo collector-emitter voltage 3 0 v v ebo emitter-base voltage 3.0 v i c collector current (instantaneous) 1 2 00 ma t j junction temperature 200 o c t stg storage temperature -65 to 200 o c symbol parameters rating units absolute maximum ratings: p 1db power output at 1 db compression: f = 1.0 ghz w 8 collector efficiency class c % 65 h fe forward current transfer ratio: v cb = 8v, i c = 4 00 ma 20 60 100 p t total power dissipation w 1 2
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